NCE60ND45G Todos los transistores

 ..1. Size:341K  ncepower
 nce60nd45g.pdf

NCE60ND45G http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45G uses advanced trench technology and General Features design to provide excellent RDS(ON) with low gate charge. It VDS = 60V,ID =45A can be used in a wide variety of applications. RDS(ON)

 5.1. Size:616K  ncepower
 nce60nd45ag.pdf

NCE60ND45AG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND45AG uses advanced trench technology and General Features design to provide excellent R with low gate charge. It can V =60V,I =45A DS(ON) DS D be used in a wide variety of applications. R =9.4m (typical) @ V =10V DS(ON) GS R =13.4m (typical) @ V =4.5V Application DS(ON) GS

 5.2. Size:614K  ncepower
 nce60nd45xg.pdf

NCE60ND45XG http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET General Features Description V = 60V,I =45A DS D The NCE60ND45XG uses advanced trench technology and R

 7.1. Size:643K  ncepower
 nce60nd03n.pdf

http //www.ncepower.com NCE60ND03N NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03N uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 7.2. Size:684K  ncepower
 nce60nd18g.pdf

Pb Free Product http //www.ncepower.com NCE60ND18G NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND18G uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V =60V,I =18A DS D Schematic diagram R

 7.3. Size:405K  ncepower
 nce60nd08s.pdf

http //www.ncepower.com NCE60ND08S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND08S uses advanced trench technology and design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. General Features V = 60V,I =8A DS D R

 7.4. Size:659K  ncepower
 nce60nd03s.pdf

http //www.ncepower.com NCE60ND03S NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND03S uses advanced trench technology to provide excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as Schematic diagram a Battery protection or in other switching application. General Features V =60V,I =3A DS D R

 7.5. Size:416K  ncepower
 nce60nd09as.pdf

NCE60ND09AS http //www.ncepower.com NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND09AS uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 60V,ID =9A Schematic diagram RDS(ON)

 7.6. Size:658K  ncepower
 nce60nd20ak.pdf

Pb Free Product http //www.ncepower.com NCE60ND20AK NCE N-Channel Enhancement Mode Power MOSFET Description The NCE60ND20AK uses advanced trench technology and design to provide excellent R with low gate DS(ON) charge. It can be used in a wide variety of applications. General Features V =60V,I =20A Schematic diagram DS D R