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FQD7P20 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQD7P20
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 55 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 200 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 5.7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 19 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.69 Ohm
   Paquete / Cubierta: TO252 DPAK
 

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FQD7P20 Datasheet (PDF)

 ..1. Size:731K  fairchild semi
fqd7p20tf fqd7p20tm fqd7p20 fqu7p20 fqu7p20tu.pdf pdf_icon

FQD7P20

April 2000TMQFETQFETQFETQFETFQD7P20 / FQU7P20200V P-ChanneI MOSFETGeneraI Description FeaturesThese P-Channel enhancement mode power field effect -5.7A, -200V, RDS(on) = 0.69 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 19 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technolo

 ..2. Size:947K  onsemi
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FQD7P20

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 ..3. Size:265K  inchange semiconductor
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FQD7P20

isc P-Channel MOSFET Transistor FQD7P20FEATURESDrain Current I = -5.7A@ T =25D CDrain Source Voltage-: V = -200V(Min)DSSStatic Drain-Source On-Resistance: R = 0.69(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpu

 9.1. Size:707K  fairchild semi
fqd7p06tf fqd7p06tm fqd7p06 fqu7p06 fqu7p06tu.pdf pdf_icon

FQD7P20

May 2001TMQFETFQD7P06 / FQU7P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -5.4A, -60V, RDS(on) = 0.45 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 6.3 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially

Otros transistores... HUFA76419DF085 , FQD6N50C , FQD7N10L , HUFA75645S3S , FQD7N20L , IRFS450B , FQD7N30 , FQD7P06 , IRFP064N , FQD8P10 , FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C .

History: APT1004RGN

 

 
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