2N6765 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N6765
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 150
W
|Vds|ⓘ - Voltaje máximo drenador - fuente: 150
V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20
V
|Id|ⓘ - Corriente continua de drenaje: 25
A
Tjⓘ - Temperatura máxima de unión: 150
°C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 100
nS
Cossⓘ - Capacitancia
de salida: 1200
pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12
Ohm
Paquete / Cubierta:
TO204
Búsqueda de reemplazo de 2N6765 MOSFET
-
Selección ⓘ de transistores por parámetros
2N6765 PDF Specs
9.4. Size:146K international rectifier
2n6762 irf430.pdf 
PD - 90336F IRF430 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6762 HEXFET TRANSISTORS JANTXV2N6762 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 500V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF430 500V 1.5 4.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
9.5. Size:144K international rectifier
2n6768 irf350.pdf
PD - 90339F IRF350 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6768 HEXFET TRANSISTORS JANTXV2N6768 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF350 400V 0.300 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
9.6. Size:146K international rectifier
2n6760 irf330.pdf
PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760 HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF330 400V 1.00 5.5A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces... See More ⇒
9.7. Size:145K international rectifier
2n6766 irf250.pdf
PD - 90338E IRF250 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6766 HEXFET TRANSISTORS JANTXV2N6766 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/543] 200V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF250 200V 0.085 30A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. TO-3 The efficient geometry and unique ... See More ⇒
9.13. Size:64K omnirel
2n6764 2n6766 2n6768 2n6770.pdf
2N6764, JANTX2N6764, JANTXV2N6764 2N6768, JANTX2N6768, JANTXV2N6768 2N6766, JANTX2N6766, JANTXV2N6766 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor FEATURES Low RDS(on) Ease of Paralleling Qualified to MIL-PRF-19500/543 DESCRIPTION... See More ⇒
Otros transistores... 2N6762JTXV
, 2N6763
, 2N6764
, 2N6764JAN
, 2N6764JANTX
, 2N6764JANTXV
, 2N6764JTX
, 2N6764JTXV
, 18N50
, 2N6766
, 2N6766JAN
, 2N6766JANTX
, 2N6766JANTXV
, 2N6766JTX
, 2N6766JTXV
, 2N6767
, 2N6768
.
