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2SK3135 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2SK3135
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 100 W
   Voltaje máximo drenador - fuente |Vds|: 60 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 75 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Voltaje de corte de la puerta |Vgs(off)|: 1 V
   Carga de la puerta (Qg): 125 nC
   Tiempo de subida (tr): 300 nS
   Conductancia de drenaje-sustrato (Cd): 1000 pF
   Resistencia entre drenaje y fuente RDS(on): 0.0075 Ohm
   Paquete / Cubierta: LDPAK

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2SK3135 Datasheet (PDF)

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2sk3135.pdf

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2SK3135(L), 2SK3135(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1067-0400 (Previous: ADE-208-695B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(L

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rej03g1067 2sk3135lsds.pdf

2SK3135
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To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

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2sk3135s.pdf

2SK3135
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isc N-Channel MOSFET Transistor 2SK3135SFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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2sk3135l.pdf

2SK3135
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isc N-Channel MOSFET Transistor 2SK3135LFEATURESDrain Current : I = 75A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 7.5m(Max)@VGS= 10VDS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

Otros transistores... 2SK3000 , 2SK3069 , 2SK3070 , 2SK3080 , 2SK3081 , 2SK3082 , 2SK3133 , 2SK3134 , NCEP85T25VD , 2SK3136 , 2SK3140 , 2SK3141 , 2SK3142 , 2SK3147 , 2SK3148 , 2SK3149 , 2SK3150 .

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