NCEP008NH40ASL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP008NH40ASL
Código: P008NH40ASL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 270 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 397 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 130 nC
trⓘ - Tiempo de subida: 48 nS
Cossⓘ - Capacitancia de salida: 2000 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.00095 Ohm
Paquete / Cubierta: STOLL
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NCEP008NH40ASL Datasheet (PDF)
ncep008nh40asl.pdf
NCEP008NH40ASLhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40ASL uses Super Trench III technologyV =40V,I =397ADS Dthat is uniquely optimized to provide the most efficient highR =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to
ncep008nh40agu.pdf
http://www.ncepower.com NCEP008NH40AGUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40AGU uses Super Trench III technologyV =40V,I =353ADS Dthat is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andswitching power losses are minimized due to an
ncep008nh40gu.pdf
http://www.ncepower.comNCEP008NH40GUNCE N-Channel Super Trench III Power MOSFETDescription General FeaturesThe NCEP008NH40GU uses Super Trench III technologyV =40V,I =375ADS Dthat is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5VDS(ON) GSswitch
ncep008nh40sl.pdf
http://www.ncepower.comNCEP008NH40SLNCE Automotive N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP008NH40SL uses Super Trench III technology V =40V,I =420ADS Dthat is uniquely optimized to provide the most efficient highR =0.6m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =0.95m (typical) @ V =4.5VDS
Otros transistores... NCE8601B , NCE8651Q , NCEA2309 , NCEA75H25 , NCEAP020N60GU , NCEAP055N12D , NCEAP4075GU , NCEAP60P90AK , IRF640 , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , NCEP015N85LL , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU , NCEP018NH30QU .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F