NCEP008NH40ASL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: NCEP008NH40ASL  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 270 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 397 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 2000 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.00095 Ohm

Encapsulados: STOLL

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NCEP008NH40ASL datasheet

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NCEP008NH40ASL

NCEP008NH40ASL http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40ASL uses Super Trench III technology V =40V,I =397A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to

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NCEP008NH40ASL

http //www.ncepower.com NCEP008NH40AGU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40AGU uses Super Trench III technology V =40V,I =353A DS D that is uniquely optimized to provide the most efficient high R =0.72m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and switching power losses are minimized due to an

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NCEP008NH40ASL

http //www.ncepower.com NCEP008NH40GU NCE N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40GU uses Super Trench III technology V =40V,I =375A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS(ON) GS switch

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NCEP008NH40ASL

http //www.ncepower.com NCEP008NH40SL NCE Automotive N-Channel Super Trench III Power MOSFET Description General Features The NCEP008NH40SL uses Super Trench III technology V =40V,I =420A DS D that is uniquely optimized to provide the most efficient high R =0.6m (typical) @ V =10V DS(ON) GS frequency switching performance. Both conduction and R =0.95m (typical) @ V =4.5V DS

MOSTRAR MÁS

Otros transistores... NCE8601B, NCE8651Q, NCEA2309, NCEA75H25, NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, IRF640, NCEP008NH40SL, NCEP013NH40GU, NCEP014NH60GU, NCEP015N85LL, NCEP015NH30AGU, NCEP015NH30AQU, NCEP015NH30GU, NCEP018NH30QU