NCEP015N85LL MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP015N85LL
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 370 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 2720 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Paquete / Cubierta: TOLL-8L
Búsqueda de reemplazo de MOSFET NCEP015N85LL
NCEP015N85LL Datasheet (PDF)
ncep015n85ll.pdf
NCEP015N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =370ADS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)DS(on)lo
ncep015n30gu.pdf
http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
ncep015n60ll.pdf
NCEP015N60LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =340ADS Dswitching performance. Both conduction and switching power R =1.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati
ncep015nh30aqu.pdf
NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
ncep015nh30agu.pdf
NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a
ncep015nh30gu.pdf
NCEP015NH30GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP015NH30GU uses Super Trench III technologyV =30V,I =189ADS Dthat is uniquely optimized to provide the most efficient highR =1.25m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.7m (typical) @ V =4.5VDS(ON) GSswi
Otros transistores... NCEAP020N60GU , NCEAP055N12D , NCEAP4075GU , NCEAP60P90AK , NCEP008NH40ASL , NCEP008NH40SL , NCEP013NH40GU , NCEP014NH60GU , IRF640N , NCEP015NH30AGU , NCEP015NH30AQU , NCEP015NH30GU , NCEP018NH30QU , NCEP023NH85AGU , NCEP023NH85GU , NCEP1580F , NCEP40ND80G .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: SUN830I | SUN830F | SUN830DN | SUN830D | SUN82A20CI | SUN50A20CI | SUN09A40D | SUN05A50ZF | SUN05A50ZD | SUN05A25F | SRN1865FD | SRN1860FD | SRN1860F | SRN1665FD | SRN1660FD | SRN1660F