NCEP015N85LL Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: NCEP015N85LL 📄📄
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 480 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 370 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 2720 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0015 Ohm
Encapsulados: TOLL-8L
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NCEP015N85LL datasheet
ncep015n85ll.pdf
NCEP015N85LL NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is V =85V,I =370A DS D uniquely optimized to provide the most efficient high frequency R =1.1m , typical@ V =10V DS(ON) GS switching performance. Both conduction and switching power Excellent gate charge x R product(FOM) DS(on) lo
ncep015n30gu.pdf
http //www.ncepower.com NCEP015N30GU NCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @
ncep015n60ll.pdf
NCEP015N60LL NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is General Features uniquely optimized to provide the most efficient high frequency V =60V,I =340A DS D switching performance. Both conduction and switching power R =1.0m , typical @ V =10V DS(ON) GS losses are minimized due to an extremely low combinati
ncep015nh30aqu.pdf
NCEP015NH30AQU http //www.ncepower.com NCE N-Channel Super Trench III Power MOSFET Description The NCEP015NH30AQU uses Super Trench III technology General Features that is uniquely optimized to provide the most efficient high V =30V,I =174A DS D frequency switching performance. Both conduction and R =1.4m (typical) @ V =10V DS(ON) GS switching power losses are minimized due to a
Otros transistores... NCEAP020N60GU, NCEAP055N12D, NCEAP4075GU, NCEAP60P90AK, NCEP008NH40ASL, NCEP008NH40SL, NCEP013NH40GU, NCEP014NH60GU, IRF640N, NCEP015NH30AGU, NCEP015NH30AQU, NCEP015NH30GU, NCEP018NH30QU, NCEP023NH85AGU, NCEP023NH85GU, NCEP1580F, NCEP40ND80G
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