NCEP015NH30GU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: NCEP015NH30GU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 89 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 189 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 825 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0026 Ohm
   Paquete / Cubierta: PDFN5X6-8L

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NCEP015NH30GU Datasheet (PDF)

..1. Size:1032K ncepower
ncep015nh30gu.pdf

NCEP015NH30GUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionGeneral FeaturesThe NCEP015NH30GU uses Super Trench III technologyV =30V,I =189ADS Dthat is uniquely optimized to provide the most efficient highR =1.25m (typical) @ V =10VDS(ON) GSfrequency switching performance. Both conduction andR =1.7m (typical) @ V =4.5VDS(ON) GSswi

3.1. Size:636K ncepower
ncep015nh30aqu.pdf

NCEP015NH30AQUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AQU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =174ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a

3.2. Size:829K ncepower
ncep015nh30agu.pdf

NCEP015NH30AGUhttp://www.ncepower.comNCE N-Channel Super Trench III Power MOSFETDescriptionThe NCEP015NH30AGU uses Super Trench III technologyGeneral Featuresthat is uniquely optimized to provide the most efficient highV =30V,I =180ADS Dfrequency switching performance. Both conduction and R =1.4m (typical) @ V =10VDS(ON) GSswitching power losses are minimized due to a

6.1. Size:347K ncepower
ncep015n30gu.pdf

http://www.ncepower.com NCEP015N30GUNCE N-Channel Super Trench II Power MOSFET Description General Features The series of devices uses Super Trench II technology that is VDS =30V,ID =170A uniquely optimized to provide the most efficient high frequency RDS(ON)=1.3m (typical) @ VGS=10V switching performance. Both conduction and switching power RDS(ON)=1.9m (typical) @

6.2. Size:847K ncepower
ncep015n60ll.pdf

NCEP015N60LLNCE N-Channel Super Trench II Power MOSFETDescriptionThe series of devices uses Super Trench II technology that isGeneral Featuresuniquely optimized to provide the most efficient high frequency V =60V,I =340ADS Dswitching performance. Both conduction and switching power R =1.0m , typical @ V =10VDS(ON) GSlosses are minimized due to an extremely low combinati

6.3. Size:762K ncepower
ncep015n85ll.pdf

NCEP015N85LLNCE N-Channel Super Trench II Power MOSFETDescriptionGeneral FeaturesThe series of devices uses Super Trench II technology that is V =85V,I =370ADS Duniquely optimized to provide the most efficient high frequencyR =1.1m , typical@ V =10VDS(ON) GSswitching performance. Both conduction and switching power Excellent gate charge x R product(FOM)DS(on)lo

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