BL10N40-D Todos los transistores

 ..1. Size:1123K  belling
 bl10n40-p bl10n40-a bl10n40-u bl10n40-d.pdf

BL10N40 Power MOSFET 1 Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:120K  international rectifier
 irfbl10n60a.pdf

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu

 9.2. Size:441K  jilin sino
 bl10n15a bl10p15a.pdf

 9.3. Size:1506K  belling
 bl10n80-p bl10n80-a bl10n80-w bl10n80-f.pdf

BL10N80 Power MOSFET 1 Description Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.4. Size:909K  belling
 bl10n70a-p bl10n70a-a.pdf

BL10N70A Power MOSFET 1 Description Step-Down Converter BL10N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.5. Size:539K  belling
 bl10n60-p bl10n60-a.pdf

BL10N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 9.6. Size:1134K  belling
 bl10n70-p bl10n70-a.pdf

BL10N70 Power MOSFET 1 Description Step-Down Converter BL10N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.7. Size:1050K  belling
 bl10n65a-p bl10n65a-a.pdf

BL10N65A Power MOSFET 1 Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.8. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf

BL10N60A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati