BL10N60-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BL10N60-P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 180 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 10 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 150 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.6 Ohm

Encapsulados: TO-220

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BL10N60-P datasheet

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 bl10n60-p bl10n60-a.pdf pdf_icon

BL10N60-P

BL10N60 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose application

 7.1. Size:120K  international rectifier
 irfbl10n60a.pdf pdf_icon

BL10N60-P

PD - 91819C SMPS MOSFET IRFBL10N60A HEXFET Power MOSFET Applications VDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power Switching Benefits Low Gate Charge Qg results in simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Cu

 7.2. Size:538K  belling
 bl10n60a-p bl10n60a-a.pdf pdf_icon

BL10N60-P

BL10N60A Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL10N60A, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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 bl10n65a-p bl10n65a-a.pdf pdf_icon

BL10N60-P

BL10N65A Power MOSFET 1 Description Step-Down Converter BL10N65A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

MOSTRAR MÁS

Otros transistores... NCES120R018T4, BL10N40-A, BL10N40-D, BL10N40-P, BL10N40-U, BL10N60-A, BL10N60A-A, BL10N60A-P, IRFP260, BL10N65A-A, BL10N65A-P, BL10N70-A, BL10N70A-A, BL10N70A-P, BL10N70-P, BL10N80-A, BL10N80-F