BL10N70A-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BL10N70A-P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 122 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 10 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 29 nC
trⓘ - Tiempo de subida: 26 nS
Cossⓘ - Capacitancia de salida: 113 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.2 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de BL10N70A-P MOSFET
BL10N70A-P Datasheet (PDF)
bl10n70a-p bl10n70a-a.pdf

BL10N70A Power MOSFET 1Description Step-Down Converter BL10N70A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS
bl10n70-p bl10n70-a.pdf

BL10N70 Power MOSFET 1Description Step-Down Converter BL10N70, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
irfbl10n60a.pdf

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu
bl10n15a bl10p15a.pdf

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBL10N15A BL10P15A APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS
Otros transistores... BL10N60-A , BL10N60A-A , BL10N60A-P , BL10N60-P , BL10N65A-A , BL10N65A-P , BL10N70-A , BL10N70A-A , TK10A60D , BL10N70-P , BL10N80-A , BL10N80-F , BL10N80-P , BL10N80-W , BL12N60-A , BL12N60A-A , BL12N60A-P .
History: 2N6845U
History: 2N6845U



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