BL10N80-A Todos los transistores

 

BL10N80-A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BL10N80-A
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 62.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 10 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 110 nS
   Cossⓘ - Capacitancia de salida: 200 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
   Paquete / Cubierta: TO-220F
     - Selección de transistores por parámetros

 

BL10N80-A Datasheet (PDF)

 ..1. Size:1506K  belling
 bl10n80-p bl10n80-a bl10n80-w bl10n80-f.pdf pdf_icon

BL10N80-A

BL10N80 Power MOSFET 1Description Step-Down Converter BL10N80, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 9.1. Size:120K  international rectifier
 irfbl10n60a.pdf pdf_icon

BL10N80-A

PD - 91819CSMPS MOSFETIRFBL10N60AHEXFET Power MOSFETApplicationsVDSS Rds(on) max ID Switch Mode Power Supply ( SMPS ) Uninterruptable Power Supply 600V 0.61 11A High Speed Power SwitchingBenefits Low Gate Charge Qg results in simpleDrive Requirement Improved Gate, Avalanche and Dynamicdv/dt Ruggedness Fully Characterized Capacitance andAvalanche Voltage and Cu

 9.2. Size:441K  jilin sino
 bl10n15a bl10p15a.pdf pdf_icon

BL10N80-A

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBL10N15A BL10P15A APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS

 9.3. Size:1123K  belling
 bl10n40-p bl10n40-a bl10n40-u bl10n40-d.pdf pdf_icon

BL10N80-A

BL10N40 Power MOSFET 1Description Step-Down Converter BL10N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

MOSTRAR MÁS

Otros transistores... IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: FS10VS-9 | IRF7456PBF | ATP107 | IPW60R045CP | TK4P60D | NCEP063N10GU | NTD65N03R-035

 

 
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