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BL15N50-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BL15N50-P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 200 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 25 nS
   Cossⓘ - Capacitancia de salida: 235 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO-220

 Búsqueda de reemplazo de MOSFET BL15N50-P

 

BL15N50-P Datasheet (PDF)

 ..1. Size:1253K  belling
bl15n50-p bl15n50-a bl15n50-f.pdf

BL15N50-P
BL15N50-P

BL15N50-APF Power MOSFET 1.Description Step-Down Converter BL15N50-APF, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS

 9.1. Size:894K  jilin sino
bl15n15a bl15p15a.pdf

BL15N50-P
BL15N50-P

DARLINGTON COMPLEMENTARY POWER TRANSISTORS RBL15N15A BL15P15A APPLICATIONS Audio Series Regulator General Purpose FEATURES High current capability High reliability RoHS

 9.2. Size:1196K  belling
bl15n25-p bl15n25-a bl15n25-u bl15n25-d.pdf

BL15N50-P
BL15N50-P

BL15N25 Power MOSFET 1Description Step-Down Converter BL15N25, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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