FQI27N25TUF085 Todos los transistores

 

FQI27N25TUF085 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FQI27N25TUF085
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 180 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Qgⓘ - Carga de la puerta: 45 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm
   Paquete / Cubierta: TO262 I2PAK
 

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FQI27N25TUF085 Datasheet (PDF)

 4.1. Size:814K  fairchild semi
 fqb27n25tm am002 fqi27n25tu fqi27n25 fqb27n25.pdf pdf_icon

FQI27N25TUF085

May 2000TMQFETQFETQFETQFETFQB27N25 / FQI27N25250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology

 4.2. Size:1099K  fairchild semi
 fqi27n25tu f085.pdf pdf_icon

FQI27N25TUF085

April 2010tmFQI27N25TU_F085250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 25.5A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been especially tailo

 9.1. Size:1071K  fairchild semi
 fqb27p06tm fqi27p06tu.pdf pdf_icon

FQI27N25TUF085

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

 9.2. Size:1119K  fairchild semi
 fqb27p06 fqi27p06.pdf pdf_icon

FQI27N25TUF085

October 2008QFETFQB27P06 / FQI27P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -27A, -60V, RDS(on) = 0.07 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 33 nC)planar stripe, DMOS technology. Low Crss ( typical 120 pF)This advanced technology has been especia

MOSTRAR MÁS

Otros transistores... FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , FQH44N10 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , IRF640 , FQI4N80 , IRFW630B , FQI4N90 , FQI50N06 , FQI5N60C , IRF644B , FQI7N60 , IRF634B .

 

 
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