BL20N65-F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BL20N65-F
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 300 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 62 nC
trⓘ - Tiempo de subida: 85 nS
Cossⓘ - Capacitancia de salida: 250 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.46 Ohm
Paquete / Cubierta: TO-247
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BL20N65-F Datasheet (PDF)
bl20n65-p bl20n65-a bl20n65-w bl20n65-f.pdf
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BL20N65 Power MOSFET 1Description Step-Down Converter BL20N65, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
bl20n60-p bl20n60-a bl20n60-w bl20n60-f.pdf
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BL20N60 Power MOSFET 1Description Step-Down Converter BL20N60, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
ixbl20n300c.pdf
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Advance Technical InformationHigh Voltage,VCES = 3000VIXBL20N300CHigh Frequency,IC110 = 20ABiMOSFETTM MonolithicVCE(sat) 6.0VBipolar MOS Transistor(Electrically Isolated Tab)ISOPLUS i5-PakTMSymbol Test Conditions Maximum RatingsVCES TJ = 25C to 150C 3000 VGVCGR TJ = 25C to 150C, RGE = 1M 3000 V EC Isolated TabVGES Continuous
bl20n50-p bl20n50-a bl20n50-w bl20n50-k.pdf
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BL20N50 Power MOSFET 1Description BL20N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 500
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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Liste
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