BL25N50-F MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BL25N50-F
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 320 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 500 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 72 nC
   trⓘ - Tiempo de subida: 75 nS
   Cossⓘ - Capacitancia de salida: 350 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.21 Ohm
   Paquete / Cubierta: TO-247

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BL25N50-F Datasheet (PDF)

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BL25N50 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N50, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicati

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bl25n40-p bl25n40-a bl25n40-w bl25n40-f.pdf

BL25N40 Power MOSFET 1Description Step-Down Converter BL25N40, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

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bl25n60-w bl25n60-f.pdf

BL25N60 Power MOSFET 1Description BL25N60, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 600

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bl25n65-w bl25n65-f.pdf

BL25N65 Power MOSFET Power MOSFETPower MOSFETPower MOSFET 1 Description BL25N65, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applica

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