BL3N105-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BL3N105-P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 138 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1050 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 3.2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 22 nC
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 68 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.8 Ohm
Paquete / Cubierta: TO-220
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BL3N105-P Datasheet (PDF)
bl3n105-p bl3n105-a bl3n105-u bl3n105-d.pdf
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BL3N105 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N105, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n100e-p bl3n100e-a bl3n100e-u bl3n100e-d.pdf
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BL3N100E Power MOSFET 1Description Step-Down Converter BL3N100E, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS P
bl3n100-p bl3n100-a bl3n100-u bl3n100-d.pdf
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BL3N100 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL3N100, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applicatio
bl3n150-p bl3n150-a bl3n150-w bl3n150-k bl3n150-f bl3n150-b.pdf
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BL3N150 Power MOSFET 1Description Step-Down Converter BL3N150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa
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