BL4N80A-U MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BL4N80A-U
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 117 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 800 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 68 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 4.3 Ohm
   Paquete / Cubierta: TO-251

Búsqueda de reemplazo de MOSFET BL4N80A-U

BL4N80A-U Datasheet (PDF)

..1. Size:1178K belling
bl4n80a-p bl4n80a-a bl4n80a-u bl4n80a-d.pdf

BL4N80A Power MOSFET 1Description Step-Down Converter BL4N80A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

8.1. Size:661K belling
bl4n80-p bl4n80-a bl4n80-u bl4n80-d.pdf

BL4N80 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BL4N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

8.2. Size:787K belling
bl4n80k-p bl4n80k-a bl4n80k-u bl4n80k-d.pdf

BL4N80K Power MOSFET 1Description Step-Down Converter BL4N80K, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

Liste

Recientemente añadidas las descripciónes de los transistores: