BL4N80-D MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BL4N80-D

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 800 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 4.3 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 75 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.8 Ohm

Encapsulados: TO-252

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BL4N80-D datasheet

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BL4N80-D

BL4N80 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BL4N80, the silicon N-channel Enhanced MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications

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BL4N80-D

BL4N80A Power MOSFET 1 Description Step-Down Converter BL4N80A, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

 8.2. Size:787K  belling
 bl4n80k-p bl4n80k-a bl4n80k-u bl4n80k-d.pdf pdf_icon

BL4N80-D

BL4N80K Power MOSFET 1 Description Step-Down Converter BL4N80K, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced MOSFET technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Pa

Otros transistores... BL4N65-D, BL4N65-P, BL4N65-U, BL4N80-A, BL4N80A-A, BL4N80A-D, BL4N80A-P, BL4N80A-U, STP65NF06, BL4N80K-A, BL4N80K-D, BL4N80K-P, BL4N80K-U, BL4N80-P, BL4N80-U, BL50N30-F, BL50N30-W