2SK3141 Todos los transistores

 ..1. Size:87K  renesas
 2sk3141.pdf

2SK3141 Silicon N Channel MOS FET High Speed Power Switching REJ03G1070-0400 (Previous ADE-208-680B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 4 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate 2. Drain (Flange) G 3. Source

 ..2. Size:288K  inchange semiconductor
 2sk3141.pdf

isc N-Channel MOSFET Transistor 2SK3141 FEATURES Drain Current I = 75A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R =5 m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 0.1. Size:101K  renesas
 rej03g1070 2sk3141ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.1. Size:233K  renesas
 rej03g1072 2sk3147lsds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.2. Size:88K  renesas
 2sk3148.pdf

2SK3148 Silicon N Channel MOS FET High Speed Power Switching REJ03G1073-0200 (Previous ADE-208-748) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AD-A (Package name TO-220FM) D G 1. Gate 2. Drain 3. Source 1 S 2 3

 8.3. Size:86K  renesas
 2sk3140.pdf

2SK3140 Silicon N Channel MOS FET High Speed Power Switching REJ03G1069-0500 (Previous ADE-208-767C) Rev.5.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 6 m typ. Low drive current 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0003AE-A (Package name TO-220C FM) D 1. Gate 2. Drain G 3. Source 1 2

 8.4. Size:87K  renesas
 2sk3149.pdf

2SK3149 Silicon N Channel MOS FET High Speed Power Switching REJ03G1074-0400 (Previous ADE-208-767C) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =45 m typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004AC-A (Package name TO-220AB) D 1. Gate G 2. Drain (Flange) 3. Source 1

 8.5. Size:102K  renesas
 rej03g1074 2sk3149ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.6. Size:102K  renesas
 rej03g1073 2sk3148ds.pdf

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

 8.7. Size:94K  renesas
 2sk3147.pdf

2SK3147(L), 2SK3147(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1072-0200 (Previous ADE-208-731) Rev.2.00 Sep 07, 2005 Features Low on-resistance RDS =0.1 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code PRSS0004ZD-B RENESAS Package code PRSS0004ZD-C (Package name DPAK(L)-(

 8.8. Size:49K  hitachi
 2sk3142.pdf

2SK3142 Silicon N Channel MOS FET High Speed Power Switching ADE-208-681A (Z) 2nd. Edition Feb. 1999 Features Low on-resistance RDS(on) =4m typ. Low drive current 4V gate drive device can be driven from 5V source Outline TO 220CFM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK3142 Absolute Maximum Ratings (Ta = 25 C) Item Symbol Ratings Unit Drain to sour

 8.9. Size:786K  cn vbsemi
 2sk3148.pdf

2SK3148 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.034 at VGS = 10 V 100 50a COMPLIANT Low Thermal Resistance Package 100 % Rg Tested APPLICATIONS Isolated DC/DC Converters D TO-220 FULLPAK G S S D G N-Channel MOSFET ABSOLUTE MAXIMU

 8.10. Size:852K  cn vbsemi
 2sk3147s.pdf

2SK3147S www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS

 8.11. Size:201K  inchange semiconductor
 2sk3148.pdf

INCHANGE Semiconductor isc N-Channel MOSFET Transistor 2SK3148 FEATURES With TO-220F packaging Low switching loss Ultra low gate charge Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS Switching applications AC-DC converters LED lighting Uninterruptible power supply ABSOLUT

 8.12. Size:279K  inchange semiconductor
 2sk3140.pdf

isc N-Channel MOSFET Transistor 2SK3140 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 7.5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:289K  inchange semiconductor
 2sk3149.pdf

isc N-Channel MOSFET Transistor 2SK3149 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V =100V(Min) DSS Static Drain-Source On-Resistance R = 60m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.14. Size:357K  inchange semiconductor
 2sk3147s.pdf

isc N-Channel MOSFET Transistor 2SK3147S FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.15. Size:355K  inchange semiconductor
 2sk3147l.pdf

isc N-Channel MOSFET Transistor 2SK3147L FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 0.13 (Max)@VGS= 10V DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.16. Size:279K  inchange semiconductor
 2sk3142.pdf

isc N-Channel MOSFET Transistor 2SK3142 FEATURES Drain Current I = 60A@ T =25 D C Drain Source Voltage V =30V(Min) DSS Static Drain-Source On-Resistance R = 5m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr