BLM8205E-J MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLM8205E-J
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.3 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 19.5 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0235 Ohm
   Paquete / Cubierta: TSSOP-8

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BLM8205E-J Datasheet (PDF)

..1. Size:870K belling
blm8205e-j blm8205e-g.pdf

BLM8205EPower MOSFET1. DescriptionAdvantagesThe BLM8205E uses advanced trenchtechnology to provide excellent R ,low gateDS(ON)charge and operation with gate voltages as lowas 0.7V.This device is suitable for use as aBattery protection or other switching application.Key CharacteristicsParameter Value UnitSOT23-6Schematic diagramV 19.5 VDSI 6 ADR 18 m

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blm8205a.pdf

Pb Free ProductBLM8205A N-Channel Enhancement Mode Power MOSFET D1D2Description The BLM8205A uses advanced trench technology to provide G1 G2excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S1 S2Schematic diagram General Features VDS = 19.

7.2. Size:501K belling
blm8205b.pdf

Pb Free Product BLM8205B N-Channel Enhancement Mode Power MOSFET D1 D2 Description provide The BLM8205B uses advanced trench technology to G1 G2 excellent R , low gate charge and operation with DS(ON) gate voltages as low as 2.5V. This device is suitable for use as a S1 S2 Battery protection or in other Switching application. Schematic diagram General Features

7.3. Size:332K belling
blm8205.pdf

Pb Free Product BLM8205 N-Channel Enhancement Mode Power MOSFET D 1 D 2 Description The BLM8205 uses advanced trench technology to provide G 1 G 2 excellent R , low gate charge and operation with gate DS(ON)voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. S 1 S 2 Schematic diagram General Features

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: SI2318A

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