BLP02N06-Q MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP02N06-Q

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 156.2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 21 nS

Cossⓘ - Capacitancia de salida: 1519 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0023 Ohm

Encapsulados: PDFN5X6

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BLP02N06-Q datasheet

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 blp02n06-q.pdf pdf_icon

BLP02N06-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.1. Size:727K  belling
 blp02n06-t.pdf pdf_icon

BLP02N06-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.2. Size:1112K  belling
 blp02n06-d.pdf pdf_icon

BLP02N06-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

 5.3. Size:941K  belling
 blp02n06-p.pdf pdf_icon

BLP02N06-Q

BLP02N06 MOSFET Step-Down Converter , 1 Description BLP02N06, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Parameter

MOSTRAR MÁS

Otros transistores... BLP025N10-B, BLP025N10-P, BLP028N10-B, BLP028N10-P, BLP02N06-D, BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, IRF9540N, BLP02N06-T, BLP02N08-B, BLP02N08-BA, BLP02N08-F, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T