BLP02N08-B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP02N08-B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 416.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 85 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 180 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 122 nS

Cossⓘ - Capacitancia de salida: 2350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.002 Ohm

Encapsulados: TO-263

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BLP02N08-B datasheet

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 blp02n08-b blp02n08-p.pdf pdf_icon

BLP02N08-B

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 0.1. Size:985K  belling
 blp02n08-ba.pdf pdf_icon

BLP02N08-B

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.1. Size:752K  belling
 blp02n08-t.pdf pdf_icon

BLP02N08-B

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

 5.2. Size:953K  belling
 blp02n08-f.pdf pdf_icon

BLP02N08-B

BLP02N08 MOSFET Step-Down Converter 1 Description , BLP02N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

MOSTRAR MÁS

Otros transistores... BLP028N10-B, BLP028N10-P, BLP02N06-D, BLP02N06L-D, BLP02N06L-Q, BLP02N06-P, BLP02N06-Q, BLP02N06-T, IRLB4132, BLP02N08-BA, BLP02N08-F, BLP02N08-P, BLP02N08-T, BLP032N06-Q, BLP032N08-T, BLP036N08-B, BLP036N08-D