FDD3682 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

September 2002FDD3682N-Channel PowerTrench MOSFET100V, 32A, 36mFeatures Applications rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A DC/DC converters and Off-Line UPS Qg(tot) = 18.5nC (Typ.), VGS = 10V Distributed Power Architectures and VRMs Low Miller Charge Primary Switch for 24V and 48V Systems Low QRR Body Diode High Voltage Synchronous Rect

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDD3682www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless

INCHANGE Semiconductorisc N-Channel MOSFET Transistor FDD3682FEATURESStatic drain-source on-resistance:RDS(on)36m100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONDC-DC Converters and off-line UPSHigh Voltage Synchronous RectifierABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

FDD3682-F085ApplicationsN-Channel PowerTrench MOSFET DC/DC converters and Off-Line UPS100V, 32A, 36m Distributed Power Architectures and VRMsFeatures Primary Switch for 24V and 48V Systems rDS(ON) = 32m (Typ.), VGS = 10V, ID = 32A High Voltage Synchronous Rectifier Qg(tot) = 18.5nC (Typ.), VGS = 10V Low Miller Charge Direct Injection / Die

February 2001FDD3680100V N-Channel PowerTrench MOSFETGeneral Description FeaturesThis N-Channel MOSFET has been designed 25 A, 100 V. R = 46 m @ V = 10 VDS(ON) GSspecifically to improve the overall efficiency of DC/DCR = 51 m @ V = 6 VDS(ON) GSconverters using either synchronous or conventionalswitching PWM controllers. Low gate charge (38 nC typical)These

FDD3680100V N-Channel PowerTrench MOSFETFeaturesGeneral Description 25 A, 100 V. R = 46 m @ V = 10 VDS(ON) GSThis N-Channel MOSFET has been designedR = 51 m @ V = 6 VDS(ON) GSspecifically to improve the overall efficiency of DC/DCconverters using either synchronous or conventional Low gate charge (38 nC typical)switching PWM controllers.These MOSFETs featur

FDD3680www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless