BLP03N10-BA MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP03N10-BA

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 216 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 1130 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm

Encapsulados: TO-263-7

 Búsqueda de reemplazo de BLP03N10-BA MOSFET

- Selecciónⓘ de transistores por parámetros

 

BLP03N10-BA datasheet

 ..1. Size:1099K  belling
 blp03n10-ba blp03n10-t.pdf pdf_icon

BLP03N10-BA

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 4.1. Size:963K  belling
 blp03n10-b blp03n10-p.pdf pdf_icon

BLP03N10-BA

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 5.1. Size:959K  belling
 blp03n10-f.pdf pdf_icon

BLP03N10-BA

BLP03N10 MOSFET Step-Down Converter , 1 Description BLP03N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

 8.1. Size:967K  belling
 blp03n08-f.pdf pdf_icon

BLP03N10-BA

BLP03N08 MOSFET Step-Down Converter , 1 Description BLP03N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

MOSTRAR MÁS

Otros transistores... BLP039N08-P, BLP039N08-Q, BLP03N08-B, BLP03N08-BA, BLP03N08-F, BLP03N08-P, BLP03N08-T, BLP03N10-B, 4N60, BLP03N10-F, BLP03N10-P, BLP03N10-T, BLP042N10G-B, BLP042N10G-P, BLP042N15J-B, BLP042N15J-P, BLP045N10-B