BLP045N10-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLP045N10-P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 227.2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 965 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0045 Ohm
   Paquete / Cubierta: TO-220

Búsqueda de reemplazo de MOSFET BLP045N10-P

BLP045N10-P Datasheet (PDF)

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blp045n10-b blp045n10-p.pdf

BLP045N10 MOSFET 1Description BLP045N10, the N-channel Enhanced Power Step-Down Converter MOSFETs, is obtained by advanced double trench , technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit

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blp04n08-b blp04n08-p.pdf

BLP04N08 MOSFET Step-Down Converter 1Description , BLP04N08, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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blp042n15j-b blp042n15j-p.pdf

BLP042N15J MOSFET Step-Down Converter 1Description , BLP042N15J, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS a n d h i g h cur r e n t s w i t c h i n g a p p l i c a t i o n s . KEY CHARACTERISTIC

9.3. Size:1017K belling
blp04n10-b blp04n10-p.pdf

BLP04N10 MOSFET Step-Down Converter , 1Description BLP04N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and high current switching applications. KEY CHARACTERISTICS Parameter Value Unit V 100

9.4. Size:999K belling
blp042n10g-p blp042n10g-b.pdf

BLP042N10G MOSFET Step-Down Converter , 1Description BLP042N10G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Pa

9.5. Size:1013K belling
blp04n08-ba.pdf