BLP055N09G-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP055N09G-P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 173.6 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 90 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 120 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 44 nS

Cossⓘ - Capacitancia de salida: 678 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm

Encapsulados: TO-220

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BLP055N09G-P datasheet

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BLP055N09G-P

BLP055N09G MOSFET Step-Down Converter 1 Description , BLP055N09G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and Motor drivers. KEY CHARACTERISTICS Parameter Value Unit V 90 V DSS I 120 A

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BLP055N09G-P

BLP055N10 MOSFET Step-Down Converter , 1 Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

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BLP055N09G-P

BLP05N08G Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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BLP055N09G-P

BLP05N08G MOSFET Step-Down Converter , 1 Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete

MOSTRAR MÁS

Otros transistores... BLP045N10-B, BLP045N10-P, BLP04N08-B, BLP04N08-BA, BLP04N08-P, BLP04N10-B, BLP04N10-P, BLP055N09G-B, 8N60, BLP055N10-B, BLP055N10-P, BLP05N08G-B, BLP05N08G-P, BLP05N08G-Q, BLP05N15-B, BLP05N15-P, BLP065N08G-B