BLP055N10-B Todos los transistores

 

BLP055N10-B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BLP055N10-B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 173.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 74 nC
   trⓘ - Tiempo de subida: 21 nS
   Cossⓘ - Capacitancia de salida: 878 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0055 Ohm
   Paquete / Cubierta: TO-263
 

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BLP055N10-B Datasheet (PDF)

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BLP055N10-B

BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet

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BLP055N10-B

BLP055N09G MOSFET Step-Down Converter 1Description , BLP055N09G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for BMS and Motor drivers. KEY CHARACTERISTICS Parameter Value Unit V 90 V DSSI 120 A

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BLP055N10-B

BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V

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BLP055N10-B

BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete

MOSTRAR MÁS

Otros transistores... BLP045N10-P , BLP04N08-B , BLP04N08-BA , BLP04N08-P , BLP04N10-B , BLP04N10-P , BLP055N09G-B , BLP055N09G-P , AO3401 , BLP055N10-P , BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q , BLP05N15-B , BLP05N15-P , BLP065N08G-B , BLP065N08G-D .

History: S80N10RN | IXTH12N120

 

 
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