BLP05N15-B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLP05N15-B
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 277.7 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 173 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 108 nS
Cossⓘ - Capacitancia de salida: 758 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.005 Ohm
Paquete / Cubierta: TO-263
Búsqueda de reemplazo de BLP05N15-B MOSFET
BLP05N15-B Datasheet (PDF)
blp05n15-b blp05n15-p.pdf
BLP05N15 MOSFET Step-Down Converter 1Description , BLP05N15, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high current applications. KEY CHARACTERISTICS Parameter Value Unit V 150
blp05n08g-b blp05n08g-p.pdf
BLP05N08G Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85 V
blp05n08g-q.pdf
BLP05N08G MOSFET Step-Down Converter , 1Description BLP05N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectifiers and high speed switching applications. KEY CHARACTERISTICS Paramete
blp055n10-p blp055n10-b.pdf
BLP055N10 MOSFET Step-Down Converter , 1Description BLP055N10, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS Paramet
Otros transistores... BLP04N10-P , BLP055N09G-B , BLP055N09G-P , BLP055N10-B , BLP055N10-P , BLP05N08G-B , BLP05N08G-P , BLP05N08G-Q , NCEP15T14 , BLP05N15-P , BLP065N08G-B , BLP065N08G-D , BLP065N08GL-Q , BLP065N08G-P , BLP065N08G-U , BLP065N10GL-B , BLP065N10GL-D .
History: MME70R380PRH
History: MME70R380PRH
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