BLP06N08G-B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLP06N08G-B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 272 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 80 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 30 nS

Cossⓘ - Capacitancia de salida: 880 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.006 Ohm

Encapsulados: TO-263

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BLP06N08G-B datasheet

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 blp06n08g-b blp06n08g-p.pdf pdf_icon

BLP06N08G-B

BLP06N08G MOSFET Step-Down Converter , 1 Description BLP06N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value

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 blp065n08gl-q.pdf pdf_icon

BLP06N08G-B

BLP065N08GL MOSFET Step-Down Converter , 1 Description BLP065N08GL, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for Synchronous rectification and high speed switching applications. KEY CHARACTERISTICS P

 9.2. Size:969K  belling
 blp065n08g-d blp065n08g-u.pdf pdf_icon

BLP06N08G-B

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

 9.3. Size:962K  belling
 blp065n08g-b blp065n08g-p.pdf pdf_icon

BLP06N08G-B

BLP065N08G Step-Down Converter , 1 Description BLP065N08G, the N-channel Enhanced Power MOSFETs, is obtained by advanced double trench technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. This is suitable device for motor drivers and high speed switching applications. KEY CHARACTERISTICS Parameter Value Unit V 85

MOSTRAR MÁS

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