FQP17P06 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP17P06
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 17 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 21 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: TO220

Búsqueda de reemplazo de MOSFET FQP17P06

FQP17P06 Datasheet (PDF)

..1. Size:685K fairchild semi
fqp17p06.pdf

May 2001TMQFETFQP17P0660V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -17A, -60V, RDS(on) = 0.12 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 21 nC)planar stripe, DMOS technology. Low Crss ( typical 80 pF)This advanced technology has been especially tailored t

..2. Size:817K cn vbsemi
fqp17p06.pdf

FQP17P06www.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter S

8.1. Size:668K fairchild semi
fqp17p10.pdf

TMQFETFQP17P10100V P-Channel MOSFETGeneral Description FeaturesThese P-Channel enhancement mode power field effect -16.5A, -100V, RDS(on) = 0.19 @VGS = -10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 30 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

9.1. Size:605K fairchild semi
fqp17n08.pdf

January 2001TMQFETQFETQFETQFETFQP17N0880V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.115 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 12 nC)planar stripe, DMOS technology. Low Crss ( typical 28 pF)This advanced technology has been

9.2. Size:563K fairchild semi
fqp17n08l.pdf

December 2000TMQFETQFETQFETQFETFQP17N08L80V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 16.5A, 80V, RDS(on) = 0.1 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 8.8 nC)planar stripe, DMOS technology. Low Crss ( typical 29 pF)This advanced technology i

9.3. Size:728K fairchild semi
fqp17n40.pdf

April 2000TMQFETQFETQFETQFET 400V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 16A, 400V, RDS(on) = 0.27 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 45 nC)planar stripe, DMOS technology. Low Crss ( typical 30 pF)This advanced technology has been

Otros transistores... FDD3682 , FQP13N10L , FDB16AN08A0 , FQP13N50 , FQP14N30 , FQP16N25 , FQP17N40 , FDD6688 , RFP50N06 , FQP17P10 , FQP19N20 , FQPF13N50C , FQP19N20C , FQPF12N60C , FQP20N06 , FQP20N06L , FQP22N30 .

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