BLS60R150F-B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLS60R150F-B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 220 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 23 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 103 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm

Encapsulados: TO-263

 Búsqueda de reemplazo de BLS60R150F-B MOSFET

- Selecciónⓘ de transistores por parámetros

 

BLS60R150F-B datasheet

 ..1. Size:1047K  belling
 bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf pdf_icon

BLS60R150F-B

BLS60R150F Power MOSFET 1 Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.max I 23 A D R 0.13 DS(ON).Typ FEATURES Fast body diode MOSFET Fa

 5.1. Size:863K  belling
 bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf pdf_icon

BLS60R150F-B

BLS60R150 Power MOSFET 1 Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

 8.1. Size:632K  belling
 bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf pdf_icon

BLS60R150F-B

BLS60R360 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:1056K  belling
 bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf pdf_icon

BLS60R150F-B

BLS60R380F Power MOSFET Step-Down Converter 1 Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

MOSTRAR MÁS

Otros transistores... BLP20N10L-D, BLP20N10L-Q, BLQM15N06L-D, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A, AON6414A, BLS60R150F-I, BLS60R150F-P, BLS60R150F-W, BLS60R150-P, BLS60R150W, BLS60R360-A, BLS60R360-B, BLS60R360-D