BLS60R360-B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BLS60R360-B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 100 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 20.8 nC
   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 710 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
   Paquete / Cubierta: TO-263

Búsqueda de reemplazo de MOSFET BLS60R360-B

BLS60R360-B Datasheet (PDF)

..1. Size:632K belling
bls60r360-p bls60r360-a bls60r360-u bls60r360-d bls60r360-b.pdf

BLS60R360 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R360, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

7.1. Size:1056K belling
bls60r380f-p bls60r380f-a bls60r380f-u bls60r380f-d bls60r380f-b bls60r380f-a.pdf

BLS60R380F Power MOSFET Step-Down Converter 1Description , BLS60R380F, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

8.1. Size:863K belling
bls60r150-p bls60r150-a bls60r150-f bls60r150w.pdf

BLS60R150 Power MOSFET 1Description Step-Down Converter BLS60R150, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

8.2. Size:1433K belling
bls60r036-f bls60r036-w.pdf

BLS60R036 Power MOSFET Step-Down Converter 1Description , BLS60R036, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit V 6

8.3. Size:1047K belling
bls60r150f-p bls60r150f-a bls60r150f-i bls60r150f-b bls60r150f-w.pdf

BLS60R150F Power MOSFET 1Description Step-Down Converter BLS60R150F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. KEY CHARACTERISTICS Parameter Value Unit V 650 V DS@Tj.maxI 23 A DR 0.13 DS(ON).TypFEATURES Fast body diode MOSFET Fa

8.4. Size:604K belling
bls60r520-p bls60r520-a bls60r520-u bls60r520-d.pdf

BLS60R520 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS60R520, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

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