FQP19N20 Todos los transistores

 ..1. Size:705K  fairchild semi
 fqp19n20.pdf

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 19.4A, 200V, RDS(on) = 0.15 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 31 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has bee

 ..2. Size:1493K  onsemi
 fqp19n20.pdf

 0.1. Size:1168K  fairchild semi
 fqp19n20ctstu fqp19n20c fqpf19n20c fqpf19n20cydtu.pdf

QFET FQP19N20C/FQPF19N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 19.0A, 200V, RDS(on) = 0.17 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 40.5 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially tailo

 0.2. Size:722K  fairchild semi
 fqp19n20l.pdf

May 2000 TM QFET QFET QFET QFET 200V LOGIC N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 21A, 200V, RDS(on) = 0.14 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 27 nC) planar stripe, DMOS technology. Low Crss ( typical 30 pF) This advanced technology has b

 0.3. Size:789K  onsemi
 fqp19n20c fqpf19n20c.pdf

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur