BLS65R560-P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BLS65R560-P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 16 nC
trⓘ - Tiempo de subida: 23 nS
Cossⓘ - Capacitancia de salida: 440 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.56 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MOSFET BLS65R560-P
BLS65R560-P Datasheet (PDF)
bls65r560-p bls65r560-a bls65r560-u bls65r560-d.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BLS65R560 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R560, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls65r041f-f bls65r041f-w.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BLS65R041F Power MOSFET 1Description Step-Down Converter BLS65R041F, the silicon N-channel , Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit
bls65r165-p bls65r165-a bls65r165-i bls65r165-b bls65r165-w.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BLS65R165 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R165, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
bls65r380-p bls65r380-a bls65r380-u bls65r380-d bls65r380-b.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
BLS65R380 Power MOSFET Power MOSFETPower MOSFETPower MOSFET1 Description BLS65R380, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![BLS65R560-P](https://alltransistors.com/images/us.png)
![BLS65R560-P](https://alltransistors.com/images/es.png)
![BLS65R560-P](https://alltransistors.com/images/ru.png)
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100