BLS70R420-P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BLS70R420-P

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 100 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 9 nS

Cossⓘ - Capacitancia de salida: 500 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.42 Ohm

Encapsulados: TO-220

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BLS70R420-P datasheet

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 bls70r420-p bls70r420-a bls70r420-u bls70r420-d bls70r420-b.pdf pdf_icon

BLS70R420-P

BLS70R420 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R420, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.1. Size:604K  belling
 bls70r600-p bls70r600-a bls70r600-u bls70r600-d.pdf pdf_icon

BLS70R420-P

BLS70R600 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R600, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

 8.2. Size:1100K  belling
 bls70r900-d.pdf pdf_icon

BLS70R420-P

BLS70R900 - Power MOSFET 1 Description Step-Down Converter BLS70R900, the silicon N-channel Enhanced , MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTICS Parameter Value Unit

 8.3. Size:585K  belling
 bls70r180-p bls70r180-a bls70r180-i bls70r180-b bls70r180-w.pdf pdf_icon

BLS70R420-P

BLS70R180 Power MOSFET Power MOSFET Power MOSFET Power MOSFET 1 Description BLS70R180, the silicon N-channel Enhanced MOSFETs, is obtained by advanced Super Junction technology which reduce the conduction loss, improve switching performance. The transistor is suitable device for SMPS, high speed switching and general purpose applications. KEY CHARACTERISTI

MOSTRAR MÁS

Otros transistores... BLS70R180-A, BLS70R180-B, BLS70R180-I, BLS70R180-P, BLS70R180-W, BLS70R420-A, BLS70R420-B, BLS70R420-D, 5N60, BLS70R420-U, BLS70R600-A, BLS70R600-D, BLS70R600-P, BLS70R600-U, BLS70R900-D, AMPCW120R30CV, AMPCW120R40CU