FQP20N06L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FQP20N06L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 53 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 9.5 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO220

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FQP20N06L Datasheet (PDF)

..1. Size:673K fairchild semi
fqp20n06l.pdf

May 2001TMQFETFQP20N06L60V LOGIC N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 21A, 60V, RDS(on) = 0.055 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 9.5 nC)planar stripe, DMOS technology. Low Crss ( typical 35 pF)This advanced technology has been especially tail

..2. Size:786K onsemi
fqp20n06l.pdf

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

..3. Size:1135K cn vbsemi
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FQP20N06Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a, e Qg (Max)Definition Surface Mount0.024 at VGS = 10 V 5060 66 nC Available in Tape and Reel 0.028 at VGS = 4.5 V40 Dynamic dV/dt Rating Logic-Level Gate Drive Fast Switching Compliant to RoHS Di

..4. Size:258K inchange semiconductor
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INCHANGE Semiconductorisc N-Channel MOSFET Transistor FQP20N06LDESCRIPTIONDrain Current I =21A@ T =25D CDrain Source Voltage-: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 55m(Max)DS(on)100% Avalanche TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh current , high speed switchingSwi

6.1. Size:654K fairchild semi
fqp20n06tstu.pdf

May 2001TMQFETFQP20N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 20A, 60V, RDS(on) = 0.06 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 11.5 nC)planar stripe, DMOS technology. Low Crss ( typical 25 pF)This advanced technology has been especially tailored to

6.2. Size:655K fairchild semi
fqp20n06.pdf