MPSA65M110B MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MPSA65M110B

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 29.1 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 32 nS

Cossⓘ - Capacitancia de salida: 69 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.11 Ohm

Encapsulados: TO-220F

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MPSA65M110B datasheet

 ..1. Size:1152K  cn marching-power
mpsa65m110b.pdf pdf_icon

MPSA65M110B

MPSA65M110B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D=29.1A RDS(on) @ 0.11 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP

 6.1. Size:1658K  cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf pdf_icon

MPSA65M110B

MPSA65M170,MPSP65M170,MPSC65M170, MPSH65M170,MPSW65M170,MPSY65M170 FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS) RDS(on) 0.17 (Max)@VGS=10V Uninterruptible Power Supply (UPS) Very low FOM RDS(on) Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliant D S S Pin1 G G Pin2 Driver Source TO-247 TO-220F TO-2

 6.2. Size:1120K  cn marching-power
mpsa65m165b.pdf pdf_icon

MPSA65M110B

MPSA65M165B 650V N-Channel Super Junction MOSFET Features BV DSS=650V, I D =20.4A RDS(on) @ 0.165 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (

 6.3. Size:1212K  cn marching-power
mpsa65m1k0b.pdf pdf_icon

MPSA65M110B

MPSA65M1K 0B 650V N-Channel Super Junction MOSFET Features BV DSS=650 V, I D=4.8 A RDS(on) @ 1.0 (Max) V GS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G Built-in ESD Diode D S TO-220F Application Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl

Otros transistores... MPSA60M600, MPSP60M600, MPSU60M600, MPSD60M600, MPSA60M940, MPSP60M940, MPSU60M940, MPSD60M940, IRF740, MPSA65M130B, MPSA65M165B, MPSA65M170, MPSP65M170, MPSH65M170, MPSC65M170, MPSW65M170, MPSY65M170