MPSY65M650 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSY65M650
Código: MP65M650
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 64 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 VQgⓘ - Carga de la puerta: 8 nC
trⓘ - Tiempo de subida: 20 nS
Cossⓘ - Capacitancia de salida: 18 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.65 Ohm
Paquete / Cubierta: DFN8X8
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MPSY65M650 Datasheet (PDF)
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MPSA65M650,MPSP65M650,MPSU65M650,MPSD65M650,MPSY65M650 FEATURES APPLICATIONS BVDSS=650V, ID=8A Switch Mode Power Supply (SMPS)RDS(on):0.65(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-251 DFN 8*8TO-220FTO-220TO-252Device Marking and Package Informa
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MPSA65M260,MPSP65M260,MPSC65M260,MPSH65M260,MPSY65M260FEATURES APPLICATIONS BVDSS=650V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.26(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220FTO-220 TO-262 TO-263DFN 8*8Device Marking and Package Informat
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