MPSA65M810 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSA65M810
   Código: MP65M810
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 25 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4.5 V
   Qgⓘ - Carga de la puerta: 10.4 nC
   trⓘ - Tiempo de subida: 28 nS
   Cossⓘ - Capacitancia de salida: 16 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.81 Ohm
   Paquete / Cubierta: TO-220F

Búsqueda de reemplazo de MOSFET MPSA65M810

MPSA65M810 Datasheet (PDF)

..1. Size:1404K cn marching-power
mpsa65m810 mpsp65m810 mpsu65m810 mpsd65m810.pdf

MPSA65M810,MPSP65M810,MPSU65M810,MPSD65M810 FEATURES APPLICATIONS BVDSS=650V, ID=6A Switch Mode Power Supply (SMPS)RDS(on):0.81(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-252TO-220TO-220F TO-251Device Marking and Package InformationOrdering code

6.1. Size:1092K cn marching-power
mpsa65m830b.pdf

MPSA65M830B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID =5.5 ARDS(on) @ :0.83 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedGD Built-in ESD Diode S TO-220FApplication Switch Mode Power Supply (SMPS) TV power & LED Lighting Power

7.1. Size:1867K cn marching-power
mpsa65m390 mpsp65m390 mpsu65m390 mpsd65m390 mpsy65m390.pdf

MPSA65M390,MPSP65M390,MPSU65M390,MPSD65M390, MPSY65M390 FEATURES APPLICATIONS BVDSS=650V, ID=11A Switch Mode Power Supply (SMPS)RDS(on):0.39(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220 TO-252TO-220FTO-251 DFN 8*8Device Marking and Package Inform

7.2. Size:1903K cn marching-power
mpsa65m650 mpsp65m650 mpsu65m650 mpsd65m650 mpsy65m650.pdf

MPSA65M650,MPSP65M650,MPSU65M650,MPSD65M650,MPSY65M650 FEATURES APPLICATIONS BVDSS=650V, ID=8A Switch Mode Power Supply (SMPS)RDS(on):0.65(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-251 DFN 8*8TO-220FTO-220TO-252Device Marking and Package Informa

7.3. Size:2383K cn marching-power
mpsa65m280cfd.pdf

MPSA65M280CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack

7.4. Size:1658K cn marching-power
mpsa65m170 mpsp65m170 mpsh65m170 mpsc65m170 mpsw65m170 mpsy65m170.pdf

MPSA65M170,MPSP65M170,MPSC65M170,MPSH65M170,MPSW65M170,MPSY65M170FEATURES APPLICATIONS BVDSS=650V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.17(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantDSSPin1 : GGPin2 : Driver SourceTO-247TO-220F TO-2

7.5. Size:876K cn marching-power
mpsa65m640b.pdf

MPSA65M640B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=6.7 ARDS(on) @ :0.64 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD DiodeG DApplicationS TO-220F Switch Mode Power Supply (SMPS) Power Factor Correction (PFC

7.6. Size:1120K cn marching-power
mpsa65m165b.pdf

MPSA65M165B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D =20.4ARDS(on) @ :0.165 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (

7.7. Size:1212K cn marching-power
mpsa65m1k0b.pdf

MPSA65M1K 0B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID=4.8 ARDS(on) @ :1.0 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl

7.8. Size:1152K cn marching-power
mpsa65m110b.pdf

MPSA65M110B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=29.1ARDS(on) @ :0.11 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UP

7.9. Size:1118K cn marching-power
mpsa65m990 mpsp65m990 mpsu65m990 mpsd65m990.pdf

MPSA65M990,MPSP65M990,MPSU65M990,MPSD65M990 FEATURES APPLICATIONS BVDSS=650V, ID=4A Switch Mode Power Supply (SMPS)RDS(on):0.99(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-252TO-220TO-220F TO-251Device Marking and Package InformationOrdering code

7.10. Size:1089K cn marching-power
mpsa65m380b.pdf

MPSA65M380B650V N Channel Super Junction MOSFETFeaturesBVDSS=650 V, ID =10.4 ARDS(on) @ :0.38 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Suppl

7.11. Size:2125K cn marching-power
mpsa65m180cfd.pdf

MPSA65M180CFD650V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack

7.12. Size:1107K cn marching-power
mpsa65m210b.pdf

MPSA65M210B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=16.8ARDS(on) @ :0.21 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U

7.13. Size:1651K cn marching-power
mpsa65m1k6.pdf

MPSA65M1K6Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.6 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device

7.14. Size:1783K cn marching-power
mpsa65m1k5.pdf

MPSA65M1K5Power MOSFET650V Super-Junction Power MOSFETJunction Power MOSFETFeaturesBVDSS=650 V, ID=3 ARDS(on) @ :1.5 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) 100% Avalanche Tested RoHS compliantGDS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device

7.15. Size:1117K cn marching-power
mpsa65m130b.pdf

MPSA65M130B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, I D=25ARDS(on) @ :0.13 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD Diode DS TO-220FApplication Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS)

7.16. Size:2181K cn marching-power
mpsa65m260 mpsp65m260 mpsh65m260 mpsc65m260 mpsy65m260.pdf

MPSA65M260,MPSP65M260,MPSC65M260,MPSH65M260,MPSY65M260FEATURES APPLICATIONS BVDSS=650V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.26(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-220FTO-220 TO-262 TO-263DFN 8*8Device Marking and Package Informat

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