MPSA70M200CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA70M200CFD
Código: MP70M200CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 34 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 VQgⓘ - Carga de la puerta: 42 nC
trⓘ - Tiempo de subida: 59 nS
Cossⓘ - Capacitancia de salida: 50 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.2 Ohm
Paquete / Cubierta: TO-220F
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MPSA70M200CFD Datasheet (PDF)
mpsa70m200cfd.pdf
MPSA70M200CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
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MPSA70M290,MPSP70M290,MPSC70M290,MPSH70M290FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.29(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-262TO-220F TO-263TO-220Device Marking and Package InformationOrdering code
mpsa70m300cfd.pdf
MPSA70M300CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack
mpsa70re.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA70/DAmplifier TransistorPNP SiliconMPSA70COLLECTOR32BASE1EMITTER123CASE 2904, STYLE 1TO92 (TO226AA)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTotal Device Di
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TMCentralSemiconductor Corp.145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
mpsa70.pdf
MPSA70Amplifier TransistorPNP SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2Collector -Emitter Voltage VCEO -40 Vdc BASEEmitter -Base Voltage VEBO -4.0 Vdc1Collector Current - Continuous IC -100 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Devi
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History: DMN6066SSD | APT30M40JVR
History: DMN6066SSD | APT30M40JVR
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