MPSA70M290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: MPSA70M290
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 31 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 15 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 65 nS
   Cossⓘ - Capacitancia de salida: 51 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
   Paquete / Cubierta: TO-220F

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MPSA70M290 Datasheet (PDF)

..1. Size:1950K cn marching-power
mpsa70m290 mpsp70m290 mpsh70m290 mpsc70m290.pdf

MPSA70M290,MPSP70M290,MPSC70M290,MPSH70M290FEATURES APPLICATIONS BVDSS=700V, ID=15A Switch Mode Power Supply (SMPS)RDS(on):0.29(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-262TO-220F TO-263TO-220Device Marking and Package InformationOrdering code

6.1. Size:2212K cn marching-power
mpsa70m200cfd.pdf

MPSA70M200CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack

7.1. Size:2484K cn marching-power
mpsa70m300cfd.pdf

MPSA70M300CFD700V Super-Junction Power MOSFETFEATURES Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessGDS TO-220FAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC) Resonant switching stagesDevice Marking and Pack

8.1. Size:427K motorola
mpsa70re.pdf

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MPSA70/DAmplifier TransistorPNP SiliconMPSA70COLLECTOR32BASE1EMITTER123CASE 2904, STYLE 1TO92 (TO226AA)MAXIMUM RATINGSRating Symbol Value UnitCollectorEmitter Voltage VCEO 40 VdcEmitterBase Voltage VEBO 4.0 VdcCollector Current Continuous IC 100 mAdcTotal Device Di

8.2. Size:52K central
mpsa20 mpsa70.pdf

TMCentralSemiconductor Corp.145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

8.3. Size:104K onsemi
mpsa70.pdf

MPSA70Amplifier TransistorPNP SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2Collector -Emitter Voltage VCEO -40 Vdc BASEEmitter -Base Voltage VEBO -4.0 Vdc1Collector Current - Continuous IC -100 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Devi

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