MPSA70M290 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSA70M290
Código: MP70M290
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 15 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 27 nC
trⓘ - Tiempo de subida: 65 nS
Cossⓘ - Capacitancia de salida: 51 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm
Paquete / Cubierta: TO-220F
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MPSA70M290 Datasheet (PDF)
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TMCentralSemiconductor Corp.145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
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MPSA70Amplifier TransistorPNP SiliconFeatures Pb-Free Package is Available*http://onsemi.comCOLLECTOR3MAXIMUM RATINGSRating Symbol Value Unit2Collector -Emitter Voltage VCEO -40 Vdc BASEEmitter -Base Voltage VEBO -4.0 Vdc1Collector Current - Continuous IC -100 mAdcEMITTERTotal Device Dissipation @ TA = 25C PD 625 mWDerate above 25C 5.0 mW/CTotal Devi
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