MPSW60M150B Todos los transistores

 

MPSW60M150B MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MPSW60M150B
   Código: MP60M150B
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 151 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 21.4 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 50 nC
   trⓘ - Tiempo de subida: 23 nS
   Cossⓘ - Capacitancia de salida: 50 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.15 Ohm
   Paquete / Cubierta: TO-247

 Búsqueda de reemplazo de MOSFET MPSW60M150B

 

MPSW60M150B Datasheet (PDF)

 ..1. Size:1225K  cn marching-power
mpsw60m150b.pdf

MPSW60M150B
MPSW60M150B

MPSW60M150B600V N-Channel Super Junction MOSFETFeaturesBVDSS=600V, ID=21.4ARDS(on) @ :0.15 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche TestedG Built-in ESD DiodeDSTO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (U

 6.1. Size:1370K  cn marching-power
mpsa60m160 mpsp60m160 mpsh60m160 mpsc60m160 mpsw60m160.pdf

MPSW60M150B
MPSW60M150B

MPSA60M160,MPSP60M160,MPSC60M160,MPSH60M160,MPSW60M160FEATURES APPLICATIONS BVDSS=600V, ID=20A Switch Mode Power Supply (SMPS)RDS(on):0.16(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-263 TO-247TO-220 TO-262TO-220FDevice Marking and Package Informati

 7.1. Size:1008K  cn marching-power
mpsa60m082 mpsw60m082.pdf

MPSW60M150B
MPSW60M150B

MPSA60M082,MPSW60M082FEATURES APPLICATIONS BVDSS=600V, ID=47A Switch Mode Power Supply (SMPS)RDS(on):0.082(Max)@VGS=10V Uninterruptible Power Supply (UPS)Very low FOM RDS(on)Qg Power Factor Correction (PFC) 100% avalanche tested RoHS compliantTO-247TO-220FDevice Marking and Package InformationOrdering code Package MarkingMPSA60M082 TO-220F MP

 7.2. Size:2237K  cn marching-power
mpsw60m043cfd.pdf

MPSW60M150B
MPSW60M150B

MPSW60M043CFD600V Super-Junction Power MOSFETFEATURESBVDSS=600 V, ID=66 ARDS(on) @ :0.043 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (

 7.3. Size:1545K  cn marching-power
mpsw60m086cfd.pdf

MPSW60M150B
MPSW60M150B

MPSW60M086CFD600V Super-Junction Power MOSFETFEATURESBVDSS=600 V, ID=43ARDS(on) @ :0.086 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: OSG65R125JF

 

 
Back to Top

 


History: OSG65R125JF

MPSW60M150B
  MPSW60M150B
  MPSW60M150B
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918

 

 

 
Back to Top