MPSW65M092CFD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MPSW65M092CFD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 391 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 41 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 390 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.092 Ohm
Paquete / Cubierta: TO-247
MPSW65M092CFD Datasheet (PDF)
mpsw65m092cfd.pdf

MPSW65M092CFD650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=41ARDS(on) @ :0.092 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (P
mpsw65m045b.pdf

MPSW65M045B650V N-Channel Super Junction MOSFETFeaturesBVDSS=650V, ID =65ARDS(on) @ : 0.045 (Max) VGS=10V Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested G D Built-in ESD DiodeS TO-247Application Switch Mode Power Supply (SMPS) Uninterruptible Power Supp
mpsw65m065.pdf

MPSW65M065650V Super-Junction Power MOSFETFEATURESBVDSS=650 V, ID=55ARDS(on) @ :65m (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliantAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Power Factor Correction (PFC)Device Marking and Package InformationDevice Package Marking
mpsw65m046cfd.pdf

MPSW65M046CFD650V Super-Junction Power MOSFETJunction Power MOSFETFEATURESBVDSS=650 V, ID=62ARDS(on) @ :0.046 (Max) VGS=10V Very low FOM RDS(on)Qg 100% avalanche tested RoHS compliant Ultra-fast body diode Very high commutation ruggdnessAPPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply (UPS) Pow
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