FIR11NS65AFG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR11NS65AFG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 35 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 35 nS

Cossⓘ - Capacitancia de salida: 37 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm

Encapsulados: TO-220F

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FIR11NS65AFG datasheet

 ..1. Size:1805K  first semi
 fir11ns65afg.pdf pdf_icon

FIR11NS65AFG

FIR11NS65AFG 11A, 650V DP MOS POWER TRANSISTOR-S PIN Connection TO-220F DESCRIPTION FIR11NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high G efficiency, high power density, and superior thermal behavior. D S

 7.1. Size:2921K  first semi
 fir11ns70afg.pdf pdf_icon

FIR11NS65AFG

FIR11NS70AFG 11A,700V DP MOS Power Transistor-S PIN Connection TO-220F DESCRIPTION FIR11NS70AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DP MOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. G

 8.1. Size:1821K  first semi
 fir11n90ang.pdf pdf_icon

FIR11NS65AFG

FIR11N90ANG 900V N-Channel MOSFET PIN Connection TO-3P Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg= 60nC (Typ.). BVDSS=900V,ID=11A RDS(on) 1.1 (Max) @VG=10V 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Location

 8.2. Size:2550K  first semi
 fir11n40fg.pdf pdf_icon

FIR11NS65AFG

FIR11N40FG 400V N-Channel MOSFET-G PIN Connection TO-220F Features Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge Qg=27nC (Typ.). BVDSS=400V,ID=11A G DS RDS(on) 0.4 (Max) @V =10V G 100% Avalanche Tested g Schematic dia ram D G S Marking Diagram Y = Year A = Assembly Loc

MOSTRAR MÁS

Otros transistores... FIR10N10LG, FIR10N20LG, FIR10N50FG, FIR10N70FG, FIR10N80FG, FIR110N10PG, FIR11N40FG, FIR11N90ANG, IRF640, FIR11NS70AFG, FIR120N08PG, FIR12N15LG, FIR12N70FG, FIR12N80FG, FIR13N50FG, FIR14N50FG, FIR14N65FG