FIR12N70FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR12N70FG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 12 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 44 nC
trⓘ - Tiempo de subida: 160 nS
Cossⓘ - Capacitancia de salida: 68 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.68 Ohm
Paquete / Cubierta: TO-220F
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FIR12N70FG Datasheet (PDF)
fir12n70fg.pdf
FIR12N70FG700V N-Channel MOSFET-GPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg= 44nC (Typ.). BVDSS=700V,ID=12A GDS RDS(on) : 0.75 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ramDGSMarking DiagramY = YearA = Assembly Loc
fir12n65fg.pdf
FIR12N65FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures High Voltage : BVDSS=650V(Min.) Low Crss : Crss=14.6pF(Typ.) G Low gate charge : Qg=41nC(Typ.) D S Low RDS(on) : RDS(on)=0.65(Max.) D G S Marking DiagramY = YearA = Assembly LocationYAWWWW = Work WeekFIR12N65FFIR12N65F = Specific Device C
fir12n15lg.pdf
FIR12N15LG150V N-Channel MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 15.5nC (Typ.).S BVDSS=150V,ID=12A RDS(on) : 0.29 (Max) @VG=10VgSchematic dia ram 100% Avalanche Tested D G S Marking DiagramYAWWVTY =
fir12n60fg.pdf
FIR12N60FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FSwitchng Regulator ApplicationFeatures BVDDS=600V (Min.) Low gate charge: Qg=41nC (Typ.) Low drain-source On resistance: RDS(on)=0.65 (Max.) G D S 100% avalanche tested RoHS compliant device D G S Marking DiagramY = YearA = Assembly LocationWW = Work WeekYAWWFIR12N60F = Specif
fir12n80fg.pdf
FIR12N80FG800V N-Channel MOSFET PIN Connection TO-220FFeatures: Low Intrinsic Capacitances Excellent Switching Characteristics Extended Safe Operating Area Unrivalled Gate Charge :Qg= 45nC (Typ.) BVDSS=800V,ID=12AG D S RDS(on) :1.0 (Max) @VG=10V 100% Avalanche TestedMarking DiagramD G S Y = YearA = Assembly LocationWW = Work Week
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
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