FIR14NS65AFG MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: FIR14NS65AFG

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 139 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 650 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 14 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 37 nS

Cossⓘ - Capacitancia de salida: 45 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.31 Ohm

Encapsulados: TO-220F

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FIR14NS65AFG datasheet

 ..1. Size:2592K  first semi
 fir14ns65afg.pdf pdf_icon

FIR14NS65AFG

FIR14NS65AFG 14A, 650V DP MOS POWER TRANSISTOR-S DESCRIPTION PIN Connection TO-220F FIR14NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silan s DPMOS technology. It achieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power density, and superior thermal behavior. Fu

 7.1. Size:2684K  first semi
 fir14ns70afg.pdf pdf_icon

FIR14NS65AFG

FIR14NS70AFG 700V N-Channel Super Junction MOSFET-H Features PIN Connection TO-220F Very Low FOM (RDS(on) X Qg) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Built-in ESD Diode G Application D S Switch Mode Power Supply (SMPS) g Schematic dia ram Uninterruptible Power Supply (UPS) Power Factor Correctio

 8.1. Size:2174K  first semi
 fir14n65fg.pdf pdf_icon

FIR14NS65AFG

FIR14N65FG 14A, 650V N-CHANNEL MOSFET-E GENERAL DESCRIPTION PIN Connection TO-220F The FIR14N65FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide

 8.2. Size:4922K  first semi
 fir14n50fg.pdf pdf_icon

FIR14NS65AFG

FIR14N50FG CREAT BY ART Advanced N-Ch Power MOSFET-G PIN Connection TO-220F VDSS 500 V ID 13 A PD (TC=25 ) 150 W RDS(ON) 0.4 G D S Features Fast Switching g Schematic dia ram Low ON Resistance(Rdson 0.5 ) D Low Gate Charge (Typical Data 85nC) Low Reverse transfer capacitances(Typical 100pF) G 100% Single Pulse avalanche energy Test S Marking Di

MOSTRAR MÁS

Otros transistores... FIR11NS70AFG, FIR120N08PG, FIR12N15LG, FIR12N70FG, FIR12N80FG, FIR13N50FG, FIR14N50FG, FIR14N65FG, 10N60, FIR14NS70AFG, FIR150N06PG, FIR15N10LG, FIR16N06DG, FIR16N50FG, FIR18N50FG, FIR18N65FG, FIR19N20LG