FIR20N06LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR20N06LG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 40 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 20 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 2.6 nS
   Cossⓘ - Capacitancia de salida: 60 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: TO-252

Búsqueda de reemplazo de MOSFET FIR20N06LG

FIR20N06LG Datasheet (PDF)

..1. Size:3843K first semi
fir20n06lg.pdf

FIR20N06LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description TheFIR20N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)

8.1. Size:1511K first semi
fir20ns65afg.pdf

FIR20NS65AFG20A,650V DP MOS Power Transistor-SPIN Connection TO-220FGENERAL DESCRIPTIONFIR20NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. Itachieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power G D S density, and superior the

8.2. Size:4651K first semi
fir20n15lg.pdf

FIR20N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)

8.3. Size:3309K first semi
fir20n50fg.pdf

FIR20N50FGAdvanced N-Ch Power MOSFETPIN Connection TO-220FGeneral DescriptionFIR20N50FG is an N-channel enhancement mode power MOS field effect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. Theimproved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, provide superi

8.4. Size:2667K first semi
fir20n65afg.pdf

FIR20N65AFGPIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=75 nC (Typ.). BVDSS=650V,ID=20A G RDS(on) : 0.42 (Max) @VG=10VD S 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly LocationWW = Work

8.5. Size:1419K first semi
fir20n10lg.pdf

FIR20N10LGAdvanced N-Ch Power MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 31nC (Typ.).S BVDSS=100V,ID= 20A RDS(on) : 0.07 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY = Year

8.6. Size:8650K first semi
fir20n65fg.pdf

FIR20N65FGN-Channel Power MOSFET-XPIN Connection TO-220FVDSS 650 VID 20 APD(TC=25) 85 WRDS(ON)Typ 0.45GFeaturesDS Fast SwitchinggSchematic dia ram Low ON Resistance(Rdson 0.45 )D Low Gate Charge (Typical Data:65nC) Low Reverse transfer capacitances(Typical: 20pG 100% Single Pulse avalanche energy TestSApplicationsPower switch circuit of adapt

8.7. Size:4354K first semi
fir20n60fg.pdf

FIR20N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 20 APD(TC=25 ) 250 WRDS(ON) 0.35 G FeaturesD S Fast SwitchinggSchematic dia ram Low ON Resistance(Rdso D Low Gate Charge (Typical Data:70nC) Low Reverse transfer capacitances(Typical: 32pF)G 100% Single Pulse avalanche energy TestS ApplicationsMarking Diagr

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