FIR20N15LG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: FIR20N15LG
Código: FIR20N15L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 75 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 VQgⓘ - Carga de la puerta: 17 nC
trⓘ - Tiempo de subida: 5.5 nS
Cossⓘ - Capacitancia de salida: 290 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.085 Ohm
Paquete / Cubierta: TO-252
FIR20N15LG Datasheet (PDF)
fir20n15lg.pdf

FIR20N15LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description The FIR20N15LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS = 150V,ID =20A RDS(ON)
fir20n10lg.pdf

FIR20N10LGAdvanced N-Ch Power MOSFET-DPIN Connection TO-252(D-PAK)Features: Low Intrinsic Capacitances.D Excellent Switching Characteristics. Extended Safe Operating Area.G Unrivalled Gate Charge :Qg= 31nC (Typ.).S BVDSS=100V,ID= 20A RDS(on) : 0.07 (Max) @VG=10VgSchematic dia ram 100% Avalanche TestedD G S Marking DiagramY = Year
fir20ns65afg.pdf

FIR20NS65AFG20A,650V DP MOS Power Transistor-SPIN Connection TO-220FGENERAL DESCRIPTIONFIR20NS65AFG is an N-channel enhancement mode high voltage power MOSFETs produced using Silans DP MOS technology. Itachieves low conduction loss and switching losses. It leads the design engineers to their power converters with high efficiency, high power G D S density, and superior the
fir20n06lg.pdf

FIR20N06LGN-Channel Enhancement Mode Power MosfetPIN Connection TO-252Description TheFIR20N06LG uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features VDS =60V,ID =20A RDS(ON)
Otros transistores... FIR15N10LG , FIR16N06DG , FIR16N50FG , FIR18N50FG , FIR18N65FG , FIR19N20LG , FIR20N06LG , FIR20N10LG , IRFP260 , FIR20N50FG , FIR20N60FG , FIR20N65FG , FIR20NS65AFG , FIR24N50APTG , FIR25N03D3G , FIR2N60AFG , FIR2N65AFG .



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