FIR6N60FG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: FIR6N60FG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 85 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 50 nS
   Cossⓘ - Capacitancia de salida: 65 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.6 Ohm
   Paquete / Cubierta: TO-220F

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FIR6N60FG Datasheet (PDF)

..1. Size:3712K first semi
fir6n60fg.pdf

FIR6N60FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 600 VID 6 A PD(TC=25) 85 WRDS(ON) 1.4 G FeaturesD S Fast Switching gSchematic dia ram Low ON Resistance(Rdson1.6) D Low Gate Charge (Typical Data: 22nC) Low Reverse transfer capacitances(Typical: 14pF) G 100% Single Pulse avalanche energy Test S Marking DiagramApplicationsPowe

8.1. Size:5764K first semi
fir6n65fg.pdf

FIR6N65FGN-Channel Power MOSFETPIN Connection TO-220FVDSS 650 V ID 6 A PD(TC=25) 85 W RDS(ON)Typ 1.4 G D S Features Fast Switching gSchematic dia ram D Low ON Resistance(Rdson1.7) Low Gate Charge (Typical Data:19nC) G Low Reverse transfer capacitances(Typical:7pF) 100% Single Pulse avalanche energy Test S Marking DiagramApplications

9.1. Size:2904K first semi
fir6n40fg.pdf

FIR6N40FG400V N-Channel MOSFET -T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=22nC (Typ.). BVDSS=400V,ID=6AG RDS(on) : 1.0 (Max) @VG=10V D S 100% Avalanche Testedg Schematic dia ram D G S Marking DiagramY = YearA = Assembly

9.2. Size:2066K first semi
fir6n90fg.pdf

FIR6N90FG900V N-Channel MOSFET-T PIN Connection TO-220FFeatures: Low Intrinsic Capacitances. Excellent Switching Characteristics. Extended Safe Operating Area. Unrivalled Gate Charge :Qg=30nC (Typ.). BVDSS=900V,ID=6AG D S RDS(on) : 2.1 (Max) @VG=10V 100% Avalanche TestedgSchematic dia ram D G S Marking DiagramY = YearA = Assembly L

9.3. Size:2240K first semi
fir6n70fg.pdf

FIR6N70FGN - Ch a n n el P o w e r M O S F ET-EGENERAL DESCRIPTION PIN Connection TO-220F is an N-channel enhancement mode power MOS field FIR6N70FGeffect transistor which is produced using Silan proprietary F-CellTM structure VDMOS technology. The improved planar stripe cell and the improved guard ring terminal have been especially tailored to minimize on-state resistance, pr

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