FCPF11N60 Todos los transistores

 

FCPF11N60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: FCPF11N60
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 36 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 5 V
   Qgⓘ - Carga de la puerta: 40 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.38 Ohm
   Paquete / Cubierta: TO220F

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FCPF11N60 Datasheet (PDF)

 ..1. Size:1820K  fairchild semi
fcp11n60 fcpf11n60 fcpf11n60t.pdf

FCPF11N60 FCPF11N60

March 2014FCP11N60/FCPF11N60General Description FeaturesSuperFET MOSFET is Fairchild Semiconductors first 650V @Tj = 150Cgenera-tion of high voltage super-junction (SJ) MOSFET Typ. Rds(on)=0.32family that is utilizing charge balance technology for Ultra low gate charge (typ. Qg=40nC)outstanding low on-resistance and lower gate charge Low effective outpu

 ..2. Size:621K  fairchild semi
fcp11n60 fcpf11n60.pdf

FCPF11N60 FCPF11N60

December 2008 TMSuperFETFCP11N60/FCPF11N60General Description FeaturesSuperFETTM is a new generation of high voltage MOSFETs 650V @Tj = 150Cfrom Fairchild with outstanding low on-resistance and low Typ. Rds(on)=0.32gate charge performance, a result of proprietary technology Ultra low gate charge (typ. Qg=40nC)utilizing advanced charge balance mechanisms. L

 0.1. Size:2711K  fairchild semi
fcp11n60n fcpf11n60nt.pdf

FCPF11N60 FCPF11N60

August 2009SupreMOSTMFCP11N60N / FCPF11N60NTtmN-Channel MOSFET 600V, 10.8A, 0.299Features Description RDS(on) = 0.255 ( Typ.)@ VGS = 10V, ID = 5.4A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ. Qg = 27.4nC)process that differentiates it from preceding multi-epi

 0.2. Size:620K  fairchild semi
fcp11n60f fcpf11n60f.pdf

FCPF11N60 FCPF11N60

December 2008 TMSuperFETFCP11N60F/FCPF11N60F600V N-Channel MOSFETFeatures Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of highvoltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.32balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 120ns) lower gate charge performance

 0.3. Size:373K  fairchild semi
fcpf11n60f.pdf

FCPF11N60 FCPF11N60

November 2013FCPF11N60FN-Channel SuperFET FRFET MOSFET600 V, 11 A, 380 mFeatures Description 600 V @ TJ = 150C SuperFET MOSFET is Fairchild Semiconductors first genera-tion of high voltage super-junction (SJ) MOSFET family that is Typ. RDS(on) = 320 mutilizing charge balance technology for outstanding low on- Fast Recovery Type (trr = 120 ns)resistanc

 0.4. Size:759K  onsemi
fcp11n60n fcpf11n60nt.pdf

FCPF11N60 FCPF11N60

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 0.5. Size:249K  inchange semiconductor
fcpf11n60nt.pdf

FCPF11N60 FCPF11N60

isc N-Channel MOSFET Transistor FCPF11N60NTFEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Otros transistores... FQP2N90 , FQP30N06 , FQP30N06L , FQP32N20C , FQB6N40C , FQP33N10 , FQB8N90CTM , FQP34N20 , 7N60 , FQP3N30 , FQP3N60C , FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 .

 

 
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